Electrical properties of Mg-doped and Mg, Si co-doped alumina
نویسندگان
چکیده
Impedance measurements on Mg-doped alumina ceramics, over the temperature range 400−910 °C, showed a combination of oxide ion conductivity and p-type electronic conductivity, depending oxygen partial pressure. The is attributed to vacancies, introduced as charge compensation for Mg dopant. hole creation under-bonded ions dominant in air at high temperatures. In samples co-doped with Si, impedance reduction therefore, number vacancies because self-compensation mechanism co-doping lead direct replacement Al3+by Mg2+ Si4+; level was also reduced.
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ژورنال
عنوان ژورنال: Journal of The European Ceramic Society
سال: 2021
ISSN: ['0955-2219', '1873-619X']
DOI: https://doi.org/10.1016/j.jeurceramsoc.2020.12.040